Specific Process Knowledge/Thin film deposition/Wordentec: Difference between revisions
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===Wafer temperature=== | ===Wafer temperature=== | ||
The wafer temperature during e-beam deposition of 200 nm Au on six wafers has been measured using thermal labels on the backside of the wafers. The following results were obtained: | The wafer temperature during e-beam deposition of 200 nm Au on six wafers has been measured using thermal labels on the backside of the wafers. The following results were obtained: | ||
{| border="1" cellspacing="0" cellpadding="2" | |||
! Wafer | |||
! Temperature [C] | |||
|- | |||
|1 | |||
|48 | |||
|- | |||
|2 | |||
|60 | |||
|- | |||
|3 | |||
|65 | |||
|- | |||
|4 | |||
|71 | |||
|- | |||
|5 | |||
|71 | |||
|- | |||
|6 | |||
|77 | |||
|- | |||
|} | |||
The temperatures are accurate within approximately +/- 3C and probably underestimating the actual wafer temperature slightly. It is observed that the wafer temperature increases with each wafer, thus if wafer temperature is of concern it is advised to reduce the number of wafers per run. | |||
==Equipment performance and and process related parameters Wordentec== | ==Equipment performance and and process related parameters Wordentec== | ||