Specific Process Knowledge/Characterization/XPS

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XPS-ThermoScientific

The XPS system placed at Danchip (room 904, building 346).

A X-ray Photoelectron Spectroscopy (XPS) system can be used at Danchip. The system is a Thermo K-Alpha system, placed in the basement of building 346.

The user manual(s), user APV(s), technical information and contact information can be found in LabManager:

XPS-ThermoScientific in LabManager

Elemental analysis

The XPS instrument can be used to do elemental analysis, chemical state analysis on the sample surface or deeper down by a depth profiling. A comparison about techniques and instruments used for elemental analysis at Danchip can be found on the page Element analysis.

More about the different possibilities of the XPS instrument is found here:

• XPS technique
• Elemental composition analysis
• Chemical state analysis
• Depth profiling
• Carbon contamination

Equipment performance of XPS-ThermoScientific

Purpose	Chemical analysis	Probing elemental composition Chemical state identification Non destructive technique Surface sensitive Depth profiling possible by ion beam etch of sample
Performance	Spot size	Can be set between 30µm - 400µm
	Probing depth	Depending on probed element. Max probe depth lies within 10-200 Å.
	Resolution	Dependent on probed elements. Concentrations down to about 0,5 atomic % can in some cases be detected.
	Charge compensation	Flood gun can be used for charge compensation of non conductive samples
	Finding structures	Choose measuring spot from camera image (magnified)
Depth profiling	Purpose	With ion beam etch the top layer of the material can be removed, to do a depth profiling
	Ion beam size	About 3x1 mm
Substrates	Substrate size	Maximum 60x60 mm
	Substrate thickness	Maximum height about 20 mm