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==Oxidation==
==Oxidation==
At Danchip we have seven furnaces for oxidation: A1, A2, A3, C1, C3, D1 and Noble. Oxidation can take place either by a dry process or a wet process. The film quality of dry oxide is better than for wet oxide with regards to density and dielectric constant, however the oxidation rate is slow for dry oxide.
At Danchip we have seven furnaces for oxidation of silicon samples: Boron Drive-in and Pre-dep furnace (A1), Phosphorous Drive-in furnace (A3), Noble furnace, Anneal-oxide furnace (C1), Anneal-Bond furnace (C3), APOX furnace (D1) and Multipurpose Annealing furnace.
If the film quality for the wet oxide is acceptable then the thickness and the time it takes to grow the oxide often decides if a dry or wet oxidation is chosen.
 
*Dry oxidation is used from 5 nm - 200 nm and can be grown in the furnaces: A1, A2, A3, C1, C3.
Oxidation can take place either by a dry process or a wet process, depending on what furnace that is used for the oxidation. The film quality for a dry oxide is better than the film quality for a wet oxide with regards to density and dielectric constant. However, the oxidation rate is slow for a dry oxide.
*Wet oxidation is used up to 4 µm and can be grown in the furnaces: A1, A3, Noble.
 
*Very thick oxide >4 µm can be grown in D1, it is still a wet oxidation.
*Dry oxidation is used for 5 nm - 200 nm of oxide and can be grown in the furnaces: A1, A2, A3, C1, C3, Multipurpose Annealing
*Wet oxidation is used for up to 4 µm of oxide and can be grown in the furnaces: A1, A3, D1.
*Very thick oxide layers >4 µm can be grown in D1 by a wet oxidation (only performed by Danchip).


The standard recipes, quality control limits and results for the Boron Drive-in + Predep furnace (A1) and the Phosphorus Drive-in furnace (A3) can be found here:  
The standard recipes, quality control limits and results for the Boron Drive-in + Predep furnace (A1) and the Phosphorus Drive-in furnace (A3) can be found here:  
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*[[Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace|Standard recipes, QC limits and results for the Phosphorus Drive-in furnace (A3)]]
*[[Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace|Standard recipes, QC limits and results for the Phosphorus Drive-in furnace (A3)]]
*[[Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace|Wet oxidation in Anneal-oxide furnace (C1)]]
*[[Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace|Wet oxidation in Anneal-oxide furnace (C1)]]
*[[/Oxidation on III-V furnace (D4)|Oxidation on III-V furnace (D4)]] - ''For oxidation of Al<sub>x</sub>GaAs layers.''


==Comparison of the seven oxidation furnaces==
==Comparison of the seven oxidation furnaces==
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