Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing: Difference between revisions
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Recommended parameters for development of different resists. | Recommended parameters for development of different resists. | ||
*'''AZ nLOF''' | *'''AZ nLOF 2020''' | ||
Exposure dose: 16s @ 7 mW/cm2 (2 µm) | Exposure dose: 16s @ 7 mW/cm2 (2 µm) | ||