Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/ProcessD/PrD-4: Difference between revisions
Created page with " {| border="2" cellpadding="0" cellspacing="0" style="text-align:center;" |+ '''Process runs''' |- ! rowspan="2" width="40"| Date ! colspan="4" width="120"| Substrate Informat..." |
No edit summary |
||
Line 1: | Line 1: | ||
<-- Ok, jmli 20170627 /--> | |||
{| border="2" cellpadding="0" cellspacing="0" style="text-align:center;" | {| border="2" cellpadding="0" cellspacing="0" style="text-align:center;" |
Revision as of 10:34, 27 June 2017
<-- Ok, jmli 20170627 /-->
Date | Substrate Information | Process Information | SEM Images | ||||||
---|---|---|---|---|---|---|---|---|---|
Wafer info | Mask | Material/ Exposed area | Tool / Operator | Conditioning | Recipe | Wafer ID | Comments | ||
8/1-2015 | 4" Wafer with travkaXX mask | AZ standard | Si / XX % | Pegasus/jmli | s004781 | danchip/jml/showerhead/prD/PrD-4, 150 cyc or 8:00 mins | S004782 | New showerhead |