Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/ProcessD/NewProcessD: Difference between revisions

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! width="40" | Comments
! width="40" | Comments
|-
|-
| 20/11-2014
| 15/12-2014
| 4" Wafer with AZ resist
| 4" Wafer with AZ resist
| Travka50 pattern
| Travka50 pattern
| Si / 50+ %  
| Si / 50 %  
| Pegasus/jmli
| Pegasus/jmli
| 10 minute TDESC clean
| 20 minute TDESC clean
| danchip/jml/showerhead/prD, 110 cycles or 8:04 minutes
| danchip/jml/showerhead/prD/New Process D, 75 cycles or 5:00 minutes  
| S004584
| S004743
! Old showerhead
|
[[file:S004584-1.jpg|150px|frameless]]
[[file:S004584-3.jpg|150px|frameless]]
 
|-
| 1/12-2014
| 1/4 6" Wafer with 210 nm oxide and 1800 nm polysilicon crystalbonded on carrier
| standard stepper mask (50 nm barc + 320 nm krf)
| Si / 50+ %
| Pegasus/jmli
| 10 minute TDESC clean + 45 sec barc etch
| danchip/jml/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes  
| S004675
! New showerhead  
! New showerhead  
|  
|  
 
[[file:S00743-01.jpg|150px|frameless]]
[[file:S00743-02.jpg|150px|frameless]]
[[file:S00743-03.jpg|150px|frameless]]
[[file:S00743-04.jpg|150px|frameless]]
[[file:S00743-05.jpg|150px|frameless]]
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[[file:S00743-06.jpg|150px|frameless]]
[[file:S00743-07.jpg|150px|frameless]]
|-
|-
|}
|}

Revision as of 14:50, 16 January 2015

Process runs
Date Substrate Information Process Information SEM Images
Wafer info Mask Material/ Exposed area Tool / Operator Conditioning Recipe Wafer ID Comments
15/12-2014 4" Wafer with AZ resist Travka50 pattern Si / 50 % Pegasus/jmli 20 minute TDESC clean danchip/jml/showerhead/prD/New Process D, 75 cycles or 5:00 minutes S004743 New showerhead

File:S00743-01.jpg File:S00743-02.jpg File:S00743-03.jpg File:S00743-04.jpg File:S00743-05.jpg File:S00743-06.jpg File:S00743-06.jpg File:S00743-07.jpg

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