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  <!-- *[[Specific Process Knowledge/Etch/DRIE-Pegasus/VeeryDeeep| Very deep etching]] -->
  <!-- *[[Specific Process Knowledge/Etch/DRIE-Pegasus/VeeryDeeep| Very deep etching]] -->
<br clear="all" />
== Change of showerhead in December 2014 ==
The showerhead that distributes the process gasses inside the plasma source has been changed. With the new design the gas flow resistance in the gas line from MFC to plasma has been reduced. This has very little or no impact on processes that have a continuous gas flow - i.e. processes that are not switched. However, for processes with several gas flows that switch on and off, the switching from one gas flow to another will be much more well defined. This enables us to run Bosch processes with shorter cycles times. Shorter cycles times means smaller scallops and hence lower roughness and better control.
As stated, we believe that only switched processes will be affected by this change. Continuous processes such as [[Specific Process Knowledge/Etch/DRIE-Pegasus/processC|Process C]], [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142|Nano1.42]], isotropic etches, barc etches or the black silicon recipes are not believed to be noticeably affected.
Click [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange|HERE]] to see a comparison of some the etches before and after the change of the showerhead.
== Additional information ==
'''Wafer bonding'''
To find information on how to bond wafers or chips to a carrier wafer, click [[Specific Process Knowledge/Etch/DryEtchProcessing/Bonding| here]].
'''Acceptance test'''
The instrument was opened for users in April 2010 when the acceptance test was signed. This was based on the performance of five standard recipes (A, B, C, D and SOI) that are further examined below. The acceptance test report is found [[Media:Pegasus_AcceptanceTest.pdf|here]].
'''Characterisation of etched trenches'''
Comparing differences in etched trenches requires a set of common parameters for each trench. Click [[Specific Process Knowledge/Etch/DRIE-Pegasus/TrenchCharacterisation|here]] to find more information about the parameters used on the DRIE-Pegasus process development.
'''Material from SPTS'''
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/SPTSdocs|Hardware and process applications]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/FAQ|Miscellaneous information]]
'''Internal Danchip Process log'''
Process log at Danchip [http://labintra.danchip.dtu.dk/index.php/Main_Page/Process_Logs/jmli/Pegasus]


==Equipment performance and process related parameters==
==Equipment performance and process related parameters==
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* Aluminium (only very mild processes such as process C and nanoetches)
* Aluminium (only very mild processes such as process C and nanoetches)
|}
|}
<br clear="all" />
== Change of showerhead in December 2014 ==
The showerhead that distributes the process gasses inside the plasma source has been changed. With the new design the gas flow resistance in the gas line from MFC to plasma has been reduced. This has very little or no impact on processes that have a continuous gas flow - i.e. processes that are not switched. However, for processes with several gas flows that switch on and off, the switching from one gas flow to another will be much more well defined. This enables us to run Bosch processes with shorter cycles times. Shorter cycles times means smaller scallops and hence lower roughness and better control.
As stated, we believe that only switched processes will be affected by this change. Continuous processes such as [[Specific Process Knowledge/Etch/DRIE-Pegasus/processC|Process C]], [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142|Nano1.42]], isotropic etches, barc etches or the black silicon recipes are not believed to be noticeably affected.
Click [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange|HERE]] to see a comparison of some the etches before and after the change of the showerhead.
== Additional information ==
'''Wafer bonding'''
To find information on how to bond wafers or chips to a carrier wafer, click [[Specific Process Knowledge/Etch/DryEtchProcessing/Bonding| here]].
'''Acceptance test'''
The instrument was opened for users in April 2010 when the acceptance test was signed. This was based on the performance of five standard recipes (A, B, C, D and SOI) that are further examined below. The acceptance test report is found [[Media:Pegasus_AcceptanceTest.pdf|here]].
'''Characterisation of etched trenches'''
Comparing differences in etched trenches requires a set of common parameters for each trench. Click [[Specific Process Knowledge/Etch/DRIE-Pegasus/TrenchCharacterisation|here]] to find more information about the parameters used on the DRIE-Pegasus process development.
'''Material from SPTS'''
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/SPTSdocs|Hardware and process applications]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/FAQ|Miscellaneous information]]
'''Internal Danchip Process log'''
Process log at Danchip [http://labintra.danchip.dtu.dk/index.php/Main_Page/Process_Logs/jmli/Pegasus]
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/DRIE-Pegasus"