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Specific Process Knowledge/Lithography/CSAR: Difference between revisions

Tigre (talk | contribs)
Tigre (talk | contribs)
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! width=15%|
! width=15%|
! colspan="4"|  SEM inspection of wafer 3.05, 50 nm exposed pattern, shot pitch 5 nm
! colspan="4"|  SEM inspection of wafer 3.05, 50 nm exposed pattern, shot pitch 5 nm
|-
|-
! 207 [muC/cm2]
| [[File:CSAR50nmoverview-10%.png|270px]]
| [[File:CSAR50nmlines-10%.png|270px]]
|NO ACHK READY
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|-
|-  
|-  
Line 604: Line 598:
! width=15%|
! width=15%|
! colspan="4"|  SEM inspection of wafer 3.05, 30 nm exposed pattern, shot pitch 5 nm
! colspan="4"|  SEM inspection of wafer 3.05, 30 nm exposed pattern, shot pitch 5 nm
|-
|-
! 207 [muC/cm2]
| [[File:CSAR30nmoverview-10%.png|270px]]
| [[File:CSAR30nmlines-10%.png|270px]]
|NO ACHK READY
|-
|-
|-  
|-  
Line 635: Line 623:
! width=15%|
! width=15%|
! colspan="4"|  SEM inspection of wafer 3.05, 20 nm exposed pattern, shot pitch 5 nm
! colspan="4"|  SEM inspection of wafer 3.05, 20 nm exposed pattern, shot pitch 5 nm
|-
|-
! 207 [muC/cm2]
| [[File:CSAR30nmoverview-10%.png|270px]]
| [[File:CSAR30nmlines-10%.png|270px]]
|NO ACHK READY
|-
|-
|-  
|-