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Specific Process Knowledge/Lithography/CSAR: Difference between revisions

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DCH-Employees-701
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=== SEM inspection ===
=== SEM inspection ===


{| class = "collapsible collapsed"  width=100% style = "border-radius: 10px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15% |  
! width=15% |  
! colspan="7" width=85% | SEM inspection of wafer 6.13, 100 nm exposed pattern, shot pitch 7 nm
! colspan="7" width=85% | SEM inspection of wafer 6.13, 100 nm exposed pattern, shot pitch 7 nm
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{| class = "collapsible collapsed"  width=100% style = "border-radius: 10px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
{| class = "collapsible collapsed"  width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
! width=15% |  
! width=15% |  
!colspan="7" width=85%|  SEM inspection of wafer 6.13, 50 nm exposed pattern, shot pitch 7 nm
!colspan="7" width=85%|  SEM inspection of wafer 6.13, 50 nm exposed pattern, shot pitch 7 nm
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|}
|}


{| class="wikitable collapsible collapsed" style="border: 5px solid black;" style="width: 90%;" align="center"
{| class = "collapsible collapsed" width=100% style = "border-radius: 6px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;"
!colspan="6"|   SEM inspection of wafer 6.13, 30 nm exposed pattern, shot pitch 7 nm
! width=15% |
!colspan="7" width=85%|     SEM inspection of wafer 6.13, 30 nm exposed pattern, shot pitch 7 nm
|-
|-
|-
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