Specific Process Knowledge/Lithography/CSAR: Difference between revisions
Appearance
| Line 424: | Line 424: | ||
=== SEM inspection === | === SEM inspection === | ||
{| class = "collapsible collapsed" width=100% style = "border-radius: 10px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: | {| class = "collapsible collapsed" width=100% style = "border-radius: 10px; -moz-border-radius: 10px; -webkit-border-radius: 10px; -khtml-border-radius: 10px; -icab-border-radius: 10px; -o-border-radius: 10px; border: 3px solid #000000;" | ||
! width=15% | | ! width=15% | | ||
! colspan="7" width=85% | SEM inspection of wafer 6.13, 100 nm exposed pattern, shot pitch 7 nm | ! colspan="7" width=85% | SEM inspection of wafer 6.13, 100 nm exposed pattern, shot pitch 7 nm | ||
| Line 440: | Line 440: | ||
|} | |} | ||
{| class="wikitable collapsible collapsed" style="border: 5px solid black;" style="width: 90%;" align="center" | {| class="wikitable collapsible collapsed" style="border: 5px solid black;" style="width: 90%;" align="center" | ||