Specific Process Knowledge/Lithography/CSAR: Difference between revisions
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The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers. | The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers. | ||
Please be aware that I have experienced a somewhat large thickness deviation (5-8 %) depending on the amount of resist applied to the wafer before spin coating. | Please be aware that I have experienced a somewhat large thickness deviation (5-8 %) depending on the amount of resist applied to the wafer before spin coating. | ||
[[File:SpinCurveCSAR.jpg|right|600px]] | |||
<span style="color:#696969">'''Dosepattern has been e-beam exposured and SEM inspected on those wafers marked by silver gray.'''</span> | <span style="color:#696969">'''Dosepattern has been e-beam exposured and SEM inspected on those wafers marked by silver gray.'''</span> | ||