Specific Process Knowledge/Lithography/CSAR: Difference between revisions
| Line 874: | Line 874: | ||
| Si | | Si | ||
|colspan="2"| | |colspan="2"| | ||
200 nm lines: ~700 nm/min <br> | |||
130 nm lines: ~580 nm/min <br> | |||
|- | |- | ||
|CSAR | |CSAR | ||
|colspan="2"| nm/min | |colspan="2"| ~18 nm/min | ||
|- | |- | ||
|} | |} | ||