Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride: Difference between revisions
No edit summary |
|||
| Line 71: | Line 71: | ||
*Small amount of metal < 5% of the wafer coverage (ONLY in PECVD3!) | *Small amount of metal < 5% of the wafer coverage (ONLY in PECVD3!) | ||
|- | |- | ||
| Etch rate in 80<sup>o</sup>C KOH | |||
|Expect <1Å/min | |||
|Dependent on recipe: ~1-10Å/min | |||
|- | |||
| Etch rate in BHF | |||
|Very low | |||
|Very high compared to the etch rate of LPCVD nitride | |||
|- | |||
|} | |} | ||