Specific Process Knowledge/Lithography/CSAR: Difference between revisions
| Line 816: | Line 816: | ||
|- | |- | ||
! rowspan="13" align="center"| Recipe | ! rowspan="13" align="center"| Recipe | ||
| rowspan="4"| Deposition step | | rowspan="4" width ="50"| Deposition step | ||
| | |Duration | ||
|2.5 s | |2.5 s | ||
|- | |- | ||
| Gasses | | width ="30"| Gasses | ||
|C<sub>4</sub>F<sub>8</sub> 50 sccm, SF<sub>6</sub> 0 sccm | |C<sub>4</sub>F<sub>8</sub> 50 sccm, SF<sub>6</sub> 0 sccm | ||
|- | |- | ||
| Line 830: | Line 830: | ||
|- | |- | ||
| rowspan="4"| Etch step (boost) | | rowspan="4"| Etch step (boost) | ||
| | |Duration | ||
|1.5 s | |1.5 s | ||
|- | |- | ||
| Line 844: | Line 844: | ||
| rowspan="4"| Etch step (main) | | rowspan="4"| Etch step (main) | ||
| | |Duration | ||
|3.5 s | |3.5 s | ||
|- | |- | ||
| Line 858: | Line 858: | ||
|Platen temperature | |Platen temperature | ||
|20 °C | |colspan="2"|20 °C | ||
|- | |- | ||
! rowspan="1" align="center"| Conditions | ! rowspan="1" align="center"| Conditions | ||
| Conditioning | | Conditioning | ||
| Pre-clean: 10 min oxygen clean | |colspan="2"| Pre-clean: 10 min oxygen clean | ||
5 min oxygen clean between runs | 5 min oxygen clean between runs | ||
|- | |- | ||
! rowspan="2" align="center"| Etch rates | ! rowspan="2" align="center"| Etch rates | ||
| Si | | Si | ||
| | |colspan="2"| | ||
500 nm lines: nm/min <br> | 500 nm lines: nm/min <br> | ||
190 nm lines: nm/min <br> | 190 nm lines: nm/min <br> | ||
| Line 876: | Line 875: | ||
|- | |- | ||
|CSAR | |CSAR | ||
| nm/min | |colspan="2"| nm/min | ||
|- | |- | ||
|} | |} | ||