Specific Process Knowledge/Lithography/CSAR: Difference between revisions
| Line 798: | Line 798: | ||
| Si | | Si | ||
| | | | ||
500 nm lines: | 500 nm lines: ~300 nm/min <br> | ||
102 nm lines: ~250 nm/min <br> | |||
102 nm lines: nm/min <br> | |||
|- | |- | ||
|CSAR | |CSAR | ||
| Line 798: | Line 798: | ||
| Si | | Si | ||
| | | | ||
500 nm lines: | 500 nm lines: ~300 nm/min <br> | ||
102 nm lines: ~250 nm/min <br> | |||
102 nm lines: nm/min <br> | |||
|- | |- | ||
|CSAR | |CSAR | ||