Specific Process Knowledge/Lithography/CSAR: Difference between revisions
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|CSAR | |CSAR | ||
| ~55 nm/min | | ~55 nm/min | ||
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{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 80%;" | |||
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|+style="background:Black; color:White" colspan="4"|'''Recipe processC on Deep Reactive Ion Etch PEGASUS A-1''' | |||
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! rowspan="4" align="center"| Recipe | |||
| Gasses | |||
| C<sub>4</sub>F<sub>8</sub> sccm, SF<sub>6</sub> sccm | |||
|rowspan="7" width="20%" | Profiles of lines exposed at 300 µC/cm2, etched 2:30 minutes (150s) with recipe '' | |||
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| Pressure | |||
| mTorr, | |||
Strike: secs @ mTorr | |||
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| Power | |||
| W Coil Power, | |||
W Platen Power | |||
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|Platen temperature | |||
| 20°C | |||
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! rowspan="1" align="center"| Conditions | |||
| Conditioning | |||
| Pre-clean: 10 min oxygen clean | |||
5 min oxygen clean between runs | |||
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! rowspan="2" align="center"| Etch rates | |||
| Si | |||
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500 nm lines: nm/min <br> | |||
190 nm lines: nm/min <br> | |||
102 nm lines: nm/min <br> | |||
61 nm lines: nm/min | |||
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|CSAR | |||
| nm/min | |||
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|} | |} | ||