Specific Process Knowledge/Lithography/CSAR: Difference between revisions
| Line 727: | Line 727: | ||
| Gasses | | Gasses | ||
| C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<sub>6</sub> 38 sccm | | C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<sub>6</sub> 38 sccm | ||
| | |rowspan="7" | blah | ||
|- | |- | ||
| Pressure | | Pressure | ||
| 4 mTorr, | | 4 mTorr, | ||
Strike: 3 secs @ 15 mTorr | Strike: 3 secs @ 15 mTorr | ||
|- | |- | ||
| Power | | Power | ||
| 800 W Coil Power, | | 800 W Coil Power, | ||
40 W Platen Power | 40 W Platen Power | ||
|- | |- | ||
|Platen temperature | |Platen temperature | ||
| - 20°C | | - 20°C | ||
|- | |- | ||
| Line 748: | Line 747: | ||
| Pre-clean: 10 min oxygen clean | | Pre-clean: 10 min oxygen clean | ||
5 min oxygen clean between runs | 5 min oxygen clean between runs | ||
|- | |- | ||
! rowspan="2" align="center"| Etch rates | ! rowspan="2" align="center"| Etch rates | ||
| Si | | Si | ||
| [nm/min] | | [nm/min] | ||
|- | |- | ||
|CSAR | |CSAR | ||
| [nm/min] | | [nm/min] | ||
|- | |- | ||
|} | |} | ||