Specific Process Knowledge/Lithography/CSAR: Difference between revisions
| Line 744: | Line 744: | ||
| Pre-clean: 10 min oxygen clean | | Pre-clean: 10 min oxygen clean | ||
5 min oxygen clean between runs | 5 min oxygen clean between runs | ||
|- | |||
! rowspan="1" align="center"| Etch rates | |||
| [nm/min] | |||
| Si: | |||
CSAR: | |||
|- | |- | ||
|} | |} | ||