Specific Process Knowledge/Lithography/CSAR: Difference between revisions

Revision as of 12:22, 7 January 2015 view source Tigre (talk \| contribs) DCH-Employees-701 2,257 edits →Contrast Curves ← Older edit		Revision as of 14:34, 7 January 2015 view source Tigre (talk \| contribs) DCH-Employees-701 2,257 edits →Etch Tests Newer edit →
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	The tests presented here are prelimenary results and this page will be updated regularly. I post this as the interest in etch resistance of CSAR is increasing; if you have wafers or chips you would like to have tested, please send me an [[mailto:tigre@danchip.dtu.dk email]].		The tests presented here are prelimenary results and this page will be updated regularly. I post this as the interest in etch resistance of CSAR is increasing; if you have wafers or chips you would like to have tested, please send me an [[mailto:tigre@danchip.dtu.dk email]].

			We have experienced problems with removal of CSAR after chlorine-based dry etch, see the file [[:File:DryEtchTestsCSAR.pdf]]. It seems the chlorine etch forms particles of chlorinated CSAR on the surface, and these particles remains on the surface after resist removal with AR-600-71. The C4F8/SF6 etch also forms particles on the surface, but much smaller than those formed in the chlorine etch. It seems these particles are removed after 3 minutes in AR-600-71.