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Specific Process Knowledge/Bonding: Difference between revisions

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*Fusion bonding
*Fusion bonding
*Anodic bonding
*Anodic bonding
===Comparing the three bonding methods===
{| border="2" cellspacing="0" cellpadding="4" align="center"
!.
!Eutectic bonding
!Fusion bonding
!Anodic bonding
|- valign="top"
|'''General description'''
|For bonding an interphase that makes an eutecticum eg. Au/Si (two different matarials).
|For bonding two identical materials eg. Si/Si. 
|For bonding Si and Glass.
|-valign="top"
|'''Bonding temperature'''
|Depending on the eutecticum 310<math>^o</math>C to 400<math>^o</math>C.
|Depending on defects 50<math>^o</math>C to 400<math>^o</math>C.
|Depending on the voltage 300<math>^o</math>C to 500<math>^o</math>C Standard is 400<math>^o</math>C.
|-valign="top"
|'''Annnealing temperature'''
|No annealing
|1000<math>^o</math>C in the bond furnace C3
|No annealing
|-valign="top"
|'''Max. scan range z'''
|<100Å to~0.3mm
|50Å to 262µm
|1 µm (can go up to 5 µm under special settings)
|-valign="top"
|'''Resolution xy'''
|up to 5900 data points per profile
|down to 0.067 µm
|Depending on scan size and number of samples per line and number of lines - accuracy better than 2%
|-valign="top"
|'''Resolution z'''
|1Å or 25Å
|1Å, 10Å or 20Å
|<1Å - accuracy better than 2%
|- valign="top"
|'''Max. scan depth [µm] (as a function of trench width W''')
|0.87(W[µm]-5µm)
|1.2(W[µm]-5µm)
|~1 with standard cantilever.
|-valign="top"
|'''Tip radius'''
|5 µm 60<sup>o</sup> cone
|5 µm 45<sup>o</sup> cone
|<12 nm on standard cantilever
|-valign="top"
|'''Stress measurement'''
|Can be done
|Can be done
|Cannot be done
|-valign="top"
|'''Surface roughness'''
|Can be done on a line scan
|Can be done on a line scan
|Can be done on a selected surface area
|-
|}


== Choose equipment ==
== Choose equipment ==
*Speedline manual spinner - ''For spinning of PMMA and Topas''
*Speedline manual spinner - ''For spinning of PMMA and Topas''