Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/ProcessD/original: Difference between revisions
No edit summary |
No edit summary |
||
| Line 27: | Line 27: | ||
! Old showerhead | ! Old showerhead | ||
| | | | ||
[[file:S004584-1.jpg|150px|frameless]] | |||
[[file:S004584-2.jpg|150px|frameless]] | |||
[[file:S004584-3.jpg|150px|frameless]] | |||
|- | |- | ||
Revision as of 17:26, 18 December 2014
| Date | Substrate Information | Process Information | SEM Images | ||||||
|---|---|---|---|---|---|---|---|---|---|
| Wafer info | Mask | Material/ Exposed area | Tool / Operator | Conditioning | Recipe | Wafer ID | Comments | ||
| 20/11-2014 | 4" Wafer with AZ resist | Travka50 pattern | Si / 50+ % | Pegasus/jmli | 10 minute TDESC clean | danchip/jml/showerhead/prD, 110 cycles or 8:04 minutes | S004584 | Old showerhead |
|
| 1/12-2014 | 1/4 6" Wafer with 210 nm oxide and 1800 nm polysilicon crystalbonded on carrier | standard stepper mask (50 nm barc + 320 nm krf) | Si / 50+ % | Pegasus/jmli | 10 minute TDESC clean + 45 sec barc etch | danchip/jml/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes | S004675 | New showerhead | |
