Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions
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! rowspan="2" | New <!-- Showerhead --> | ! rowspan="2" | New <!-- Showerhead --> | ||
| rowspan="2" |[[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/ProcessA | 1]] <!-- link processes --> | | rowspan="2" |[[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/ProcessA | 1]] <!-- link processes --> | ||
| rowspan="2" | | | rowspan="2" | Profile improved <!-- keywords --> | ||
|- | |- | ||
! Step2 44 cyc <!-- step --> | ! Step2 44 cyc <!-- step --> | ||
Revision as of 15:28, 16 December 2014
Comparison of continuous processes
| Process | Before | After | |||||
|---|---|---|---|---|---|---|---|
| Name/Type | Description/parameters | Wafer ID | Comment | SEM images | Wafer ID | Comment | SEM images |
| Continuous black silicon recipe on blank wafer | 15 mins, -10 degrees, 32 mtorr, 60 sccm SF6, 55 sccm O2, 70 W platen | S004592 | Wafer centre | 
|
S004679 | Wafer centre | 
|
| S003900 | Wafer edge | 
|
S004679 | Wafer edge | 
| ||
| Continuous isotropic silicon etch called isoslow7 | 1 minute, 10 degrees, 10 mTorr, 80 SF6, 150 W coil, 3 W platen | S003900 | 4" wafer, 50 % load |
|
S00XXX | No test yet | File:S00XX centre.jpg |
Comparison of switched processes
| Recipe | Name | Temp. | Deposition step | Etch step | Comments | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Time | Pres. | C4F8 | SF6 | O2 | Coil | Time | Pres. | C4F8 | SF6 | O2 | Coil | Platen | Showerhead | Runs | Key words | |||
| Process A | Step1 11 cyc | 20 | 4 | 25 | 200 | 0 | 0 | 2000 | 7.0 | 25(1.5s) 90>>150 | 0 | 350(1.5s) 550 | 5 | 2800 | 120>>140(1.5s) 45 | Old | 1 | |
| Step2 44 cyc | 4 | 25 | 200 | 0 | 0 | 2000 | 7.0 | 25(1.5s) 150 | 0 | 350(1.5s) 550 | 5 | 2800 | 140(1.5s) 45 | |||||
| Step1 11 cyc | 20 | 4 | 25 | 200 | 0 | 0 | 2000 | 7.0 | 25(1.5s) 90>>150 | 0 | 350(1.5s) 550 | 5 | 2800 | 120>>140(1.5s) 45 | New | 1 | Profile improved | |
| Step2 44 cyc | 4 | 25 | 200 | 0 | 0 | 2000 | 7.0 | 25(1.5s) 150 | 0 | 350(1.5s) 550 | 5 | 2800 | 140(1.5s) 45 | |||||
| Recipe description | Name | Temp. | Deposition step | Etch step | Comments | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Time | Pres. | C4F8 | SF6 | O2 | Coil | Time | Pres. | C4F8 | SF6 | O2 | Coil | Platen | Showerhead | Runs | Key words | |||
| Polysilicon etch | polySi etch DUV mask | 30 | 2.3 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | Old | 1 | Slightly over-etching to ensure complete absence of grass |
| polySi etch DUV mask | 30 | 2.3 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | ||
| Cpoly1 | 30 | 1.2 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | Very aggressive, unusable | |
| Cpoly2 | 30 | 1.4 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | ||
| Cpoly3 | 30 | 1.6 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | ||
| Cpoly4 | 30 | 1.8 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | ||
| Cpoly5 | 30 | 2.0 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | ||