Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions

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Jmli (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,416 edits
Line 81: Line 81:
! rowspan="7" | Process A    <!-- recipe name -->
! rowspan="7" | Process A    <!-- recipe name -->
! Step1 11 cyc <!-- step -->
! Step1 11 cyc <!-- step -->
| 20      <!-- chiller temp -->
| rowspan="2" |20      <!-- chiller temp -->
! 4      <!-- dep time -->
! 4      <!-- dep time -->
| 25      <!-- dep pressure -->
| 25      <!-- dep pressure -->
Line 95: Line 95:
| 2800      <!-- coil power -->
| 2800      <!-- coil power -->
| 120>>140(1.5s) 45      <!-- platen power -->
| 120>>140(1.5s) 45      <!-- platen power -->
! Old      <!-- Showerhead -->
! rowspan="2" | Old      <!-- Showerhead -->
| rowspan="2" |[[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/ProcessA | 1]]      <!-- link processes -->
| rowspan="2" |[[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/ProcessA | 1]]      <!-- link processes -->
| rowspan="2" |    <!-- keywords -->
| rowspan="2" |    <!-- keywords -->
|-
|-
! Step2 44 cyc <!-- step -->
! Step2 44 cyc <!-- step -->
| 20      <!-- chiller temp -->
! 4      <!-- dep time -->
! 4      <!-- dep time -->
| 25      <!-- dep pressure -->
| 25      <!-- dep pressure -->
Line 114: Line 113:
| 2800      <!-- coil power -->
| 2800      <!-- coil power -->
| 140(1.5s) 45      <!-- platen power -->
| 140(1.5s) 45      <!-- platen power -->
! Old      <!-- Showerhead -->
|-
|-
| Cpoly1      <!-- step -->
| Cpoly1      <!-- step -->

Revision as of 10:24, 16 December 2014

Comparison of continuous processes

Process Before After
Name/Type Description Wafer ID Comment SEM images Wafer ID Comment SEM images
Continuous black silicon recipe on blank wafer 15 mins, -10 degrees, 32 mtorr, 60 sccm SF6, 55 sccm O2, 70 W platen S004592 Wafer centre S004679 Wafer centre
S004592 Wafer edge S004679 Wafer edge
S00XXX 8" wafer S00XXX Wafer centre File:S00XX centre.jpg
S00XXXx Wafer edge File:S00XXX dge.jpg S00XXX Wafer edge File:S00xxxx edge.jpg

Comparison of switched processes

Recipe Name Temp. Deposition step Etch step Comments
Time Pres. C4F8 SF6 O2 Coil Time Pres. C4F8 SF6 O2 Coil Platen Showerhead Runs Key words
Process A Step1 11 cyc 20 4 25 200 0 0 2000 7.0 25(1.5s) 90>>150 0 350(1.5s) 550 5 2800 120>>140(1.5s) 45 Old 1
Step2 44 cyc 4 25 200 0 0 2000 7.0 25(1.5s) 150 0 350(1.5s) 550 5 2800 140(1.5s) 45
Cpoly1 30 1.2 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1 Very aggressive, unusable
Cpoly2 30 1.4 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly3 30 1.6 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly4 30 1.8 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly5 30 2.0 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1



Recipe description Name Temp. Deposition step Etch step Comments
Time Pres. C4F8 SF6 O2 Coil Time Pres. C4F8 SF6 O2 Coil Platen Showerhead Runs Key words
Polysilicon etch polySi etch DUV mask 30 2.3 10 50 0 0 600 5.0 10 20 60 5 400 40 Old 1 Slightly over-etching to ensure complete absence of grass
polySi etch DUV mask 30 2.3 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly1 30 1.2 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1 Very aggressive, unusable
Cpoly2 30 1.4 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly3 30 1.6 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly4 30 1.8 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly5 30 2.0 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
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