Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Crystal Settings: Difference between revisions

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{| border="1" style="text-align: center;"
|-
|colspan="6" style="text-align: center;" style="background: #efefef;" | '''Material parameters for calculating the tooling factor'''
|-
!scope="row" |Material
!Density
!Z ratio
|-
|-
|TiO<sub>2</sub>
|4.260
|0.400
|-
|-
|SiO<sub>2</sub>
|2.648
|1.000
|-
|-
|Si
|2.320
|0.712
|}
{| border="1" style="text-align: center;"
{| border="1" style="text-align: center;"
|-
|-

Revision as of 11:55, 12 December 2014

Material parameters for calculating the tooling factor
Material Density Z ratio
TiO2 4.260 0.400
SiO2 2.648 1.000
Si 2.320 0.712


Settings for Crystal thickness monitor 1
Date Tooling factor: TiO2 Tooling factor: SiO2 Tooling factor: Si
22-7-2014 1.573 (wafer center)
B B1 B2 B3
C C1 C2 C3
D D1 D2 D3


Settings for Crystal thickness monitor 2
Date Tooling factor: TiO2 Tooling factor: SiO2 Tooling factor: Si
A A1 A2 A3
B B1 B2 B3
C C1 C2 C3
D D1 D2 D3
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