Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Crystal Settings: Difference between revisions

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Revision as of 11:50, 12 December 2014

Settings for Crystal thickness monitor 1
Date Tooling factor: TiO2 Tooling factor: SiO2 Tooling factor: Si
22-7-2014 1.573 (wafer center)
B B1 B2 B3
C C1 C2 C3
D D1 D2 D3


Settings for Crystal thickness monitor 2
Date Tooling factor: TiO2 Tooling factor: SiO2 Tooling factor: Si
22-7-2014 1.573 (wafer center)
B B1 B2 B3
C C1 C2 C3
D D1 D2 D3
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