Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Crystal Settings: Difference between revisions

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{| border="1" style="text-align: center;"
{| border="1" style="text-align: center; width: 320px; height: 200px;"
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!scope="row" | 
!scope="row" |Date
!|1
!|Tooling factor: TiO<sub>2</sub>
!|2
!|Tooling factor: SiO<sub>2</sub>
!|3
!|Tooling factor: Si
!|4
!|5
 
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!A
!22-7-2014
|A1
|1.573 (wafer center)
|A2
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|A3
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|A4
|A5
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!D
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Revision as of 11:50, 12 December 2014

Settings for Crystal thickness monitor 1
Date Tooling factor: TiO2 Tooling factor: SiO2 Tooling factor: Si
22-7-2014 1.573 (wafer center)
B B1 B2 B3
C C1 C2 C3
D D1 D2 D3
Settings for Crystal thickness monitor 2
Date Tooling factor: TiO2 Tooling factor: SiO2 Tooling factor: Si
22-7-2014 1.573 (wafer center)
B B1 B2 B3
C C1 C2 C3
D D1 D2 D3
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