Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cduv: Difference between revisions

Revision as of 14:33, 11 December 2014

**Process runs**
Date	Substrate Information				Process Information				SEM Images
Date	Wafer info	Mask	Material/ Exposed area	Tool / Operator	Conditioning	Recipe	Wafer ID	Comments	SEM Images
20/11-2014	6" Wafer with 210 nm oxide and 1800 nm polysilicon	standard stepper mask (50 nm barc + 320 nm krf)	Si / 50+ %	Pegasus/jmli	10 minute TDESC clean + 45 sec barc etch	danchip/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes	S004675	Old showerhead
1/12-2014	1/4 6" Wafer with 210 nm oxide and 1800 nm polysilicon crystalbonded on carrier	standard stepper mask (50 nm barc + 320 nm krf)	Si / 50+ %	Pegasus/jmli	10 minute TDESC clean + 45 sec barc etch	danchip/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes	S004675	New showerhead

@@ Line 43: / Line 43: @@
 | danchip/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes
 | S004675
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+! New showerhead
 |
 |-
 |}