Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cduv: Difference between revisions

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| 4/9-2014
| 20/11-2014
| 1/4 6" ELK stitching CB on oxide carrier
| 6" Wafer with 210 nm oxide and 1800 nm polysilicon
| standard stepper mask (50 nm barc + 320 nm krf)
| standard stepper mask (50 nm barc + 320 nm krf)
| Si / 50+ % on die
| Si / 50+ %  
| Pegasus/jmli
| Pegasus/jmli
| 5 minute TDESC clean + 30 sec barc etch
| 10 minute TDESC clean + 45 sec barc etch
| jml/polySi/lshbaseline-A: 50 cycles or 6:15 minutes  
| danchip/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes  
| S004301
| S004675
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Revision as of 11:45, 11 December 2014

Process runs
Date Substrate Information Process Information SEM Images
Wafer info Mask Material/ Exposed area Tool / Operator Conditioning Recipe Wafer ID Comments
20/11-2014 6" Wafer with 210 nm oxide and 1800 nm polysilicon standard stepper mask (50 nm barc + 320 nm krf) Si / 50+ % Pegasus/jmli 10 minute TDESC clean + 45 sec barc etch danchip/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes S004675