Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions

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! Runs
! Runs
! width="100" | Key words
! width="100" | Key words
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! Baseline    <!-- recipe name -->
| -      <!-- step -->
| 30      <!-- chiller temp -->
! 2.3      <!-- dep time -->
| 10      <!-- dep pressure -->
| 50      <!-- C4F8 flow -->
| 0      <!-- SF6 flow -->
| 0    <!-- O2 flow -->
| 600      <!-- coil power -->
| 5.0      <!-- etch time -->
| 10      <!-- etch pressure -->
| 20      <!-- C4F8 flow -->
| 60      <!-- SF6 flow -->
| 5      <!-- O2 flow -->
| 400      <!-- coil power -->
| 40      <!-- platen power -->
| -      <!-- hardware setting -->
| [[Main Page/Process Logs/jmli/Pegasus/poly/base-A | 1]]      <!-- link processes -->
|    <!-- keywords -->
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! -  <!-- recipe name -->
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|      <!-- link processes -->
|      <!-- link processes -->
|      <!-- keywords -->
|      <!-- keywords -->
|-
! Baseline    <!-- recipe name -->
| -      <!-- step -->
| 30      <!-- chiller temp -->
! 2.3      <!-- dep time -->
| 10      <!-- dep pressure -->
| 50      <!-- C4F8 flow -->
| 0      <!-- SF6 flow -->
| 0    <!-- O2 flow -->
| 600      <!-- coil power -->
| 5.0      <!-- etch time -->
| 10      <!-- etch pressure -->
| 20      <!-- C4F8 flow -->
| 60      <!-- SF6 flow -->
| 5      <!-- O2 flow -->
| 400      <!-- coil power -->
| 40      <!-- platen power -->
| -      <!-- hardware setting -->
| [[Main Page/Process Logs/jmli/Pegasus/poly/base-A | 1]]      <!-- link processes -->
|    <!-- keywords -->
|-
|-
! base-B    <!-- recipe name -->
! base-B    <!-- recipe name -->

Revision as of 09:57, 11 December 2014

Comparison of continuous processes

Process Before After
Name/Type Description Wafer ID Comment SEM images Wafer ID Comment SEM images
Continuous black silicon recipe on blank wafer 15 mins, -10 degrees, 32 mtorr, 60 sccm SF6, 55 sccm O2, 70 W platen S004592 Wafer centre S004679 Wafer centre
S004592 Wafer edge S004679 Wafer edge
Switched etch of 1.8 µm polysilicon on BOX patterned with DUV 50 cycles, 30 degrees, 2.3/5 secs, 10/10 mtorr, 0/60 sccm SF6, 0/5 sccm O2, 50/20 sccm C4F8, 600/400 W coil, 0/40 W platen S004593 6" wafer

S004679 Wafer centre
S004593 Wafer edge S004679 Wafer edge


Comparison of switched processes

Recipe Step Temp. Deposition step Etch step Process observations
Time Pres. C4F8 SF6 O2 Coil Time Pres. C4F8 SF6 O2 Coil Platen Hardware]] Runs Key words
Baseline - 30 2.3 10 50 0 0 600 5.0 10 20 60 5 400 40 - 1
-
base-B - 30 2.15 10 50 0 0 600 5.0 10 20 60 5 400 40 - 1
base-C - 30 2.15 10 50 0 0 600 5.0 10 20 60 5 400 40 - 1