Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions
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Revision as of 14:42, 10 December 2014
| Process | Before | After | |||||
|---|---|---|---|---|---|---|---|
| Name/Type | Description | Wafer ID | Comment | SEM images | Wafer ID | Comment | SEM images |
| Continuous black silicon recipe on blank wafer | 15 mins, -10 degrees, 32 mtorr, 60 sccm SF6, 55 sccm O2, 70 W platen | S004592 | Wafer centre | 
|
S004679 | Wafer centre | 
|
| S004592 | Wafer edge | 
|
S004679 | Wafer edge | 
| ||
| Switched etch of 1.8 µm polysilicon on BOX patterned with DUV | 50 cycles, 30 degrees, 2.3/5 secs, 10/10 mtorr, 0/60 sccm SF6, 0/5 sccm O2, 50/20 sccm C4F8, 600/400 W coil, 0/40 W platen | S004593 | 6" wafer |   
|
S004679 | Wafer centre |
|
| S004593 | Wafer edge |
|
S004679 | Wafer edge |
| ||
