Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions
No edit summary |
No edit summary |
||
| Line 35: | Line 35: | ||
| S004593 | | S004593 | ||
| 6" wafer | | 6" wafer | ||
| | |[[file:S00459305.jpg|50px|frameless ]] | ||
[[file:S00459305.jpg | [[file:S00459306.jpg|50px|frameless ]] | ||
[[file:S00459306.jpg | [[file:S00459307.jpg|50px|frameless ]] | ||
[[file:S00459307.jpg | [[file:S00459308.jpg|50px|frameless ]] | ||
[[file:S00459308.jpg | [[file:s004593-01.jpg|50px|frameless ]] | ||
[[file:s004593-01.jpg | [[file:s004593-02.jpg|50px|frameless ]] | ||
[[file:s004593-02.jpg | [[file:s004593-03.jpg|50px|frameless ]] | ||
[[file:s004593-03.jpg | [[file:s004593-04.jpg|50px|frameless ]] | ||
[[file:s004593-04.jpg | |||
| S004679 | | S004679 | ||
| Wafer centre | | Wafer centre | ||
Revision as of 14:41, 10 December 2014
| Process | Before | After | |||||
|---|---|---|---|---|---|---|---|
| Name/Type | Description | Wafer ID | Comment | SEM images | Wafer ID | Comment | SEM images |
| Continuous black silicon recipe on blank wafer | 15 mins, -10 degrees, 32 mtorr, 60 sccm SF6, 55 sccm O2, 70 W platen | S004592 | Wafer centre | 
|
S004679 | Wafer centre | 
|
| S004592 | Wafer edge | 
|
S004679 | Wafer edge | 
| ||
| Switched etch of 1.8 µm polysilicon on BOX patterned with DUV | 50 cycles, 30 degrees, 2.3/5 secs, 10/10 mtorr, 0/60 sccm SF6, 0/5 sccm O2, 50/20 sccm C4F8, 600/400 W coil, 0/40 W platen | S004593 | 6" wafer | 
|
S004679 | Wafer centre |
|
| S004593 | Wafer edge |
|
S004679 | Wafer edge |
| ||
