Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions
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| [[file:S004679 edge.jpg |250px|frameless ]] | | [[file:S004679 edge.jpg |250px|frameless ]] | ||
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! rowspan="2" width="100"| Switched polysilicon | ! rowspan="2" width="100"| Switched etch of 1.8 µm polysilicon on BOX patterned with DUV | ||
| rowspan="2" width="100"| 50 cycles, 30 degrees, 2.3/5 secs, 10/10 mtorr, 0/60 sccm SF<sub>6</sub>, 0/5 sccm O<sub>2</sub>, 50/20 sccm C<sub>4</sub>F<sub>8</sub>, 600/400 W coil, 0/40 W platen | | rowspan="2" width="100"| 50 cycles, 30 degrees, 2.3/5 secs, 10/10 mtorr, 0/60 sccm SF<sub>6</sub>, 0/5 sccm O<sub>2</sub>, 50/20 sccm C<sub>4</sub>F<sub>8</sub>, 600/400 W coil, 0/40 W platen | ||
| S004592 | | S004592 | ||
Revision as of 14:21, 10 December 2014
| Process | Before | After | |||||
|---|---|---|---|---|---|---|---|
| Name/Type | Description | Wafer ID | Comment | SEM images | Wafer ID | Comment | SEM images |
| Continuous black silicon recipe on blank wafer | 15 mins, -10 degrees, 32 mtorr, 60 sccm SF6, 55 sccm O2, 70 W platen | S004592 | Wafer centre | 
|
S004679 | Wafer centre | 
|
| S004592 | Wafer edge | 
|
S004679 | Wafer edge | 
| ||
| Switched etch of 1.8 µm polysilicon on BOX patterned with DUV | 50 cycles, 30 degrees, 2.3/5 secs, 10/10 mtorr, 0/60 sccm SF6, 0/5 sccm O2, 50/20 sccm C4F8, 600/400 W coil, 0/40 W platen | S004592 | Wafer centre |
|
S004679 | Wafer centre |
|
| S004592 | Wafer edge |
|
S004679 | Wafer edge |
| ||