Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions

Revision as of 14:19, 10 December 2014

**Comparison of processes before and after the change of showerhead in December 2014**
Process		Before			After
Name/Type	Description	Wafer ID	Comment	SEM images	Wafer ID	Comment	SEM images
Continuous black silicon recipe on blank wafer	15 mins, -10 degrees, 32 mtorr, 60 sccm SF₆, 55 sccm O₂, 70 W platen	S004592	Wafer centre		S004679	Wafer centre
Continuous black silicon recipe on blank wafer		S004592	Wafer edge		S004679	Wafer edge
Switched polysilicon etch on DUV wafer, (D/E) indicate Dep and Etch	50 cycles, 30 degrees, 2.3/5 secs, 10/10 mtorr, 0/60 sccm SF₆, 0/5 sccm O₂, 50/20 sccm C₄F₈, 600/400 W coil, 0/40 W platen	S004592	Wafer centre		S004679	Wafer centre
		S004592	Wafer edge		S004679	Wafer edge

@@ Line 31: / Line 31: @@
 | [[file:S004679 edge.jpg |250px|frameless ]]
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-|}
+! rowspan="2" width="100"| Switched polysilicon etch on DUV wafer, (D/E) indicate Dep and Etch
+| rowspan="2" width="100"| 50 cycles, 30 degrees,  2.3/5 secs, 10/10 mtorr, 0/60 sccm SF<sub>6</sub>, 0/5 sccm O<sub>2</sub>, 50/20 sccm C<sub>4</sub>F<sub>8</sub>, 600/400 W coil, 0/40 W platen
-{| border="1" cellpadding="1" cellspacing="1" style="text-align:center;"
-|+ '''Comparison of processes before and after the change of showerhead in December 2014'''
-|-
-! rowspan="2"| Process
-! colspan="3"| Before
-! colspan="3"| After
-|-
-! Wafer ID
-! Comment
-! SEM images
-! Wafer ID
-! Comment
-! SEM images
-|-
-! rowspan="2" width="100"| 15 minutes of black silicon recipe on blank wafer
 | S004592
 | Wafer centre