Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions
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! colspan="3"| After | ! colspan="3"| After | ||
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! Name | ! Name/Type | ||
! Description | ! Description | ||
! Wafer ID | ! Wafer ID | ||
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! SEM images | ! SEM images | ||
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! rowspan="2" width="100"| | ! rowspan="2" width="100"| Continuous black silicon recipe on blank wafer | ||
! rowspan="2" width="100"| 15 mins, -10 degrees, 32 mtorr, 60 sccm SF<sub>6</sub>, 55 sccm O<sub>2</sub>, 70 W platen | |||
| S004592 | | S004592 | ||
| Wafer centre | | Wafer centre | ||
Revision as of 14:11, 10 December 2014
| Process | Before | After | |||||
|---|---|---|---|---|---|---|---|
| Name/Type | Description | Wafer ID | Comment | SEM images | Wafer ID | Comment | SEM images |
| Continuous black silicon recipe on blank wafer | 15 mins, -10 degrees, 32 mtorr, 60 sccm SF6, 55 sccm O2, 70 W platen | S004592 | Wafer centre | 
|
S004679 | Wafer centre | 
|
| S004592 | Wafer edge | 
|
S004679 | Wafer edge | 
| ||
| Process | Before | After | ||||
|---|---|---|---|---|---|---|
| Wafer ID | Comment | SEM images | Wafer ID | Comment | SEM images | |
| 15 minutes of black silicon recipe on blank wafer | S004592 | Wafer centre |
|
S004679 | Wafer centre |
|
| S004592 | Wafer edge |
|
S004679 | Wafer edge |
| |