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Specific Process Knowledge/Direct Structure Definition: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891, Bureaucrats, danchip, Administrators
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Jehan (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891, Bureaucrats, danchip, Administrators
1,093 edits
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Prerequisites
!Prerequisites
|1
!Sample with resist.<br> A glass mask with desired pattern. For mask layout software see [[Specific Process Knowledge/Lithography/UVLithography/Mask Design| Mask design]]
|2
!Sample with resist.<br> A 3D CAD model file in GWL format. Included software can convert 3D model in STL (Standard Tessellation Language) format to GWL files.
|3
!Sample with polymer.<br> A stamp with the wanted pattern, usually in Si or SiO\rm{_2} however other materials could also be used.
|4
!A stamp/shim with the wanted pattern, usually in Ni og Al.
|5
!A 2D CAD model file in DXF or CONX format. [[Specific Process Knowledge/Lithography/UVLithography/Mask Design| Clewin5]] can convert GDS and CIF files to DXF format.
|6
!Number of lines and pitch in each direction. Your wafer.
|-
|-
|-
|-style="background:WhiteSmoke; color:black"
!Pattern generation
|1
|2
|3
|4
|5
|6
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Throughput
!Throughput (when mask/stamp/pattern available)
|1
!medium: 5-10 wafers/hour depending on exposure time
|2
!slow: 1 sample/day
|3
!medium: 5-10 wafers/hour depending on imprint time
|4
!fast: 10-100/hour
|5
!medium-slow: 0.1-1 wafers/hour depending on pattern complexity
|6
!medium: ½-3 wafers/hour depending on material and # of cuts (Si cuts at 5mm/s, SiO2 at 0.5-1 mm/s)
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|-


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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Min/max featuresize
!Min/max featuresize
|1
!1µm - wafer size
|2
!100nm - mm
|3
!100nm - µm
|4
!nm - mm
|5
!100µm - wafer size
|6
!saw blade width 60µm or 200µm. Has to cut full diameter of wafer.
|-
|-


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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Min/max aspect-ratio
!Min/max aspect-ratio
|1
!NA
|2
!2-Photon Polymerization Lithography ??
|3
!Nano Imprint Lithography ??
|4
!Polymer Injection Molder ??
|5
!50-100µm width/~1mm depth, sloping walls
|6
!60µm width/2mm depth, vertical walls
|-
|-


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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Post-treatment
!Post-treatment
|1
!resist developing/baking
|2
!resist developing/baking, ?? 2-Photon Polymerization Lithography
|3
!Dry Etch back (RIE), ?? Nano Imprint Lithography
|4
!None, ??Polymer Injection Molder
|5
!Sample cleaning with Ultrasound etc.
|6
!None
|-
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Patterning degree of freedom
!Patterning degree of freedom
|1
!2D
|2
!3D
|3
!2D. different depths possible
|4
!2D. different depths possible
|5
!2D. different depths possible
|6
!1D. different depths possible
|-
|-


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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Allowed materials
!Allowed materials
|1
!UV Lithography
|2
!2-Photon Polymerization Lithography
|3
!Nano Imprint Lithography
|4
!Polymer Injection Molder
|5
!Laser Micromachining Tool
|6
!Dicing saw
|-
|-


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