Specific Process Knowledge/Characterization/Topographic measurement: Difference between revisions
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'''High Aspect ratio structures''' | '''High Aspect ratio structures''' | ||
The fact that the tips of the profilers and the AFM are shaped like a cone with some tip angle causes a problem when characterizing high aspect ratio structures. For instance, if a 20 <math>\mu</math>m wide trench is etched deeper than approximately 18 <math>\mu</math>m, the tip of the Dektak will not be able to reach the bottom. In this case the only solution is to cleave the sample along a line that is perpendicular to the trench and then put it in a [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|scanning electron microscope]]. | The fact that the tips of the profilers and the AFM are shaped like a cone with some tip angle causes a problem when characterizing high aspect ratio structures. For instance, if a 20 <math>\mu</math>m wide trench is etched deeper than approximately 18 <math>\mu</math>m, the tip of the Dektak will not be able to reach the bottom. In this case the only solution is to cleave the sample along a line that is perpendicular to the trench and then put it in a [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|scanning electron microscope]]. | ||
===Comparing the two profilers and the AFM=== | ===Comparing the two profilers and the AFM=== | ||