Specific Process Knowledge/Bonding: Difference between revisions
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!Annealing temperature | !Annealing temperature | ||
|No annealing | |No annealing | ||
|1000°C-1100°C in the anneal bond furnace C3. | |1000°C-1100°C in the anneal bond furnace (C3). | ||
|No annealing | |No annealing | ||
|- | |- | ||
Revision as of 13:37, 17 November 2014
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Choose equipment
Choose bonding methods in EVG NIL
Comparing the three bonding methods in the EVG NIL
| Eutectic bonding | Fusion bonding | Anodic bonding | |
|---|---|---|---|
| General description | For bonding two substrates by use of an interphase that makes an eutecticum. | For bonding two identical materials. | For bonding Si and Glass. |
| Bonding temperature | Depending on the eutecticum 310°C to 400°C. | Depending on defects 50°C to 400°C. | Depending on the voltage 300°C to 500°C Standard is 400°C. |
| Annealing temperature | No annealing | 1000°C-1100°C in the anneal bond furnace (C3). | No annealing |
| Materials possible to bond | Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Au/Sn/Ni | Si/Si, SiO2/SiO2 | Si/Pyrex (glass) |
| Substrate size | Up to 6" (aligning only possible for 4" and 6") | Up to 6" (aligning only possible for 4" and 6") | Up to 6" (aligning only possible for 4" and 6") |
| Cleaning | Cleaning by N2. | Wet chemical cleaning, IMEC. | Cleaning by N2. |
| IR alignment | Double side polished wafers. | Double side polished wafers. | Not relevant. |