Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions

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! RIE
! RIE
! AOE
! AOE
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*Anisotropic etch: vertical sidewalls, especially good for deep etch and high aspect ratio etch  
*Anisotropic etch: vertical sidewalls, especially good for deep etch and high aspect ratio etch  
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|'''Possible masking materials'''
|'''Possible masking materials'''
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*(Poly)Silicon
*(Poly)Silicon
*Aluminium
*Aluminium
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*Typically 200-600 nm/min can be increased or decreased by using other recipe parameters.
*Typically 200-600 nm/min can be increased or decreased by using other recipe parameters.
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*1 wafer at a time
*1 wafer at a time
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*6" or 4" depending on the setup (smaller pieces if you have a carrier wafer)  
*6" or 4" depending on the setup (smaller pieces if you have a carrier wafer)  
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|'''Allowed materials'''
|'''Allowed materials'''
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Revision as of 13:28, 31 January 2008

Silicon oxide can be etched using either wet chemistry or dry etch equipment. Wet chemistry is mainly used to remove all the oxide on the surface (backside and front side) of a wafer or for isotrotropic etching. Dry etching etches anisotropic. It etches one side of the wafer at a time and can be used to etch structures with several masking materials.

Etch of silicon oxide can be done by either wet etch or dry etch. The standard setups for this here at DANCHIP are:

Wet etches:

Dry etches:

Comparison of wet Silicon Oxide etch and dry etches (RIE and AOE) etch for etching of Silicon Oxide

Wet Silicon Oxide etch (BHF and SIO Etch (wetting agent)) RIE AOE
General description
  • Isotropic etch
  • Anisotropic etch: vertical sidewalls
  • Anisotropic etch: vertical sidewalls, especially good for deep etch and high aspect ratio etch
Possible masking materials
  • Photoresist
  • Silicon nitride
  • Photoresist
  • (Poly)Silicon
  • Aluminium
  • Chromium (ONLY RIE2!)
  • Other metals that covers less the 5% of the wafer area (ONLY RIE2!)
  • Photoresist
  • (Poly)Silicon
  • Aluminium
Etch rate
  • ~75 nm/min (Thermal oxide) in BHF
  • ~90 nm/min (Thermal oxide) in SIO Etch
  • Typically 40-120 nm/min can be increased or decreased by using other recipe parameters.
  • Typically 200-600 nm/min can be increased or decreased by using other recipe parameters.
Batch size
  • 1-25 wafers at a time
  • 1 wafer at a time
  • 1 wafer at a time
Size of substrate
  • 4" wafers
  • 4" wafers or smaller pieces
  • 6" or 4" depending on the setup (smaller pieces if you have a carrier wafer)
Allowed materials
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • Blue film
  • Gold (Au) and Nickel (Ni) (but only in BHF2 (KOH)!)
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist
  • Aluminium
  • Chromium (ONLY RIE2!)
  • Other metals that covers less the 5% of the wafer area (ONLY RIE2!)
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist
  • Aluminium