Specific Process Knowledge/Wafer and sample drying: Difference between revisions
No edit summary |
|||
| Line 142: | Line 142: | ||
''If'' rinsing is used as well, the standard process is 60 seconds of rinse at 500 RPM, followed by 120/180 seconds of drying at 2000 RPM. | ''If'' rinsing is used as well, the standard process is 60 seconds of rinse at 500 RPM, followed by 120/180 seconds of drying at 2000 RPM. | ||
<gallery caption="Different places to dry your wafers" widths="250px" heights="150px" perrow="3"> | |||
image:image:spin-rinser-dryer-white.jpg|200x200px|right|thumb|Image(s) of the equipment(s). | |||
image:image:spin-rinser-dryer-white.jpg|200x200px|right|thumb|Image(s) of the equipment(s). | |||
image:image:spin-rinser-dryer-white.jpg|200x200px|right|thumb|Image(s) of the equipment(s).</gallery> | |||
| Line 147: | Line 152: | ||
<br clear="all" /> | <br clear="all" /> | ||
= Single wafer spin dryers = | = Single wafer spin dryers = | ||