Specific Process Knowledge/Etch/KOH Etch: Difference between revisions
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|'''General description''' | |'''General description''' | ||
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Etch of Si(100) | :Etch of Si(100) | ||
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Etch of Si(100) with boron etch-stop | :Etch of Si(100) with boron etch-stop | ||
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|'''Chemical solution''' | |'''Chemical solution''' | ||
|KOH:H<math>_2</math>O 500 g : 1000 ml | | | ||
|KOH:H<math>_2</math>O:IPA 500 g : 1000 ml : ?? ml | :KOH:H<math>_2</math>O 500 g : 1000 ml | ||
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:KOH:H<math>_2</math>O:IPA 500 g : 1000 ml : ?? ml | |||
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|'''Process temperature''' | |'''Process temperature''' | ||
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|'''Roughness''' | |'''Roughness''' | ||
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Typical: 100-600 Å | :Typical: 100-600 Å | ||
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May form hillocks (pyramidal) | :May form hillocks (pyramidal) | ||
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|'''Batch size''' | |'''Batch size''' | ||
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1-25 wafers at a time | :1-25 wafers at a time | ||
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1-25 wafer at a time | :1-25 wafer at a time | ||
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|'''Size of substrate''' | |'''Size of substrate''' | ||
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4" wafers | :4" wafers | ||
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4" wafers | :4" wafers | ||
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|'''Allowed materials''' | |'''Allowed materials''' | ||