Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions
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! Chromium etch 2 | ! Chromium etch 2 | ||
|- | |- | ||
| '''General description''' | |||
| | | | ||
Etch of chromium | Etch of chromium | ||
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Etch of chromium | Etch of chromium | ||
|- | |- | ||
| '''Chemical solution''' | |||
|HNO<math>_3</math>:H<math>_2</math>O:cerisulphate - 90ml:1200ml:15g | |HNO<math>_3</math>:H<math>_2</math>O:cerisulphate - 90ml:1200ml:15g | ||
|Commercial chromium etch | |Commercial chromium etch | ||
CE 8002-A | CE 8002-A | ||
|- | |- | ||
| '''Process temperature''' | |||
|Room temperature | |Room temperature | ||
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|- | |- | ||
| '''Possible masking materials''' | |||
| | | | ||
Photoresist (1.5 µm AZ5214E) | Photoresist (1.5 µm AZ5214E) | ||
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Photoresist (1.5 µm AZ5214E) | Photoresist (1.5 µm AZ5214E) | ||
|- | |- | ||
|'''Etch rate''' | |||
| | | | ||
~40-100 nm/min | ~40-100 nm/min | ||
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~10-20 nm/min | ~10-20 nm/min | ||
|- | |- | ||
|'''Batch size''' | |||
| | | | ||
1-25 wafers at a time | 1-25 wafers at a time | ||
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1-25 wafer at a time | 1-25 wafer at a time | ||
|- | |- | ||
|'''Size of substrate''' | |||
| | | | ||
4" wafers | 4" wafers | ||
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4" wafers | 4" wafers | ||
|- | |- | ||
|'''Allowed materials''' | |||
| | | | ||
No restrictions. | No restrictions. |
Revision as of 13:00, 31 January 2008
Etching of Chromium
Etching of chromium is done wet at Danchip making your own set up in a beaker in a fume hood - preferably in cleanroom 2 or 4. We have two solution for this:
- HNO:HO:cerisulphate - 90ml:1200ml:15g - standard at Danchip
- Commercial chromium etch
Etch rate are depending on the level of oxidation of the metal.
Chromium etch 1 | Chromium etch 2 | |
---|---|---|
General description |
Etch of chromium |
Etch of chromium |
Chemical solution | HNO:HO:cerisulphate - 90ml:1200ml:15g | Commercial chromium etch
CE 8002-A |
Process temperature | Room temperature | Room temperature |
Possible masking materials |
Photoresist (1.5 µm AZ5214E) |
Photoresist (1.5 µm AZ5214E) |
Etch rate |
~40-100 nm/min |
~10-20 nm/min |
Batch size |
1-25 wafers at a time |
1-25 wafer at a time |
Size of substrate |
4" wafers |
4" wafers |
Allowed materials |
No restrictions. Make a note on the beaker of which materials have been processed. |
No restrictions. Make a note on the beaker of which materials have been processed. |