Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions
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! Chromium etch 2 | ! Chromium etch 2 | ||
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| '''General description''' | |||
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Etch of chromium | Etch of chromium | ||
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Etch of chromium | Etch of chromium | ||
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| '''Chemical solution''' | |||
|HNO<math>_3</math>:H<math>_2</math>O:cerisulphate - 90ml:1200ml:15g | |HNO<math>_3</math>:H<math>_2</math>O:cerisulphate - 90ml:1200ml:15g | ||
|Commercial chromium etch | |Commercial chromium etch | ||
CE 8002-A | CE 8002-A | ||
|- | |- | ||
| '''Process temperature''' | |||
|Room temperature | |Room temperature | ||
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| '''Possible masking materials''' | |||
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Photoresist (1.5 µm AZ5214E) | Photoresist (1.5 µm AZ5214E) | ||
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Photoresist (1.5 µm AZ5214E) | Photoresist (1.5 µm AZ5214E) | ||
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|'''Etch rate''' | |||
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~40-100 nm/min | ~40-100 nm/min | ||
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~10-20 nm/min | ~10-20 nm/min | ||
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|'''Batch size''' | |||
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1-25 wafers at a time | 1-25 wafers at a time | ||
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1-25 wafer at a time | 1-25 wafer at a time | ||
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|'''Size of substrate''' | |||
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4" wafers | 4" wafers | ||
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4" wafers | 4" wafers | ||
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|'''Allowed materials''' | |||
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No restrictions. | No restrictions. | ||