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Specific Process Knowledge/Lithography/UVLithography: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
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Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,528 edits
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[[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]]
[[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]]
|28 mJ/cm<sup>2</sup> per µm resist for i-line, probably increasing with increasing thickness.
|[[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS Aligner]],


Multiple exposure recommended.
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6 - 2]] or


½ dose for broadband exposure.
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]]
|[[Specific_Process_Knowledge/Lithography/Development#Developer-6inch|AZ 351B developer]]
|[[Specific_Process_Knowledge/Lithography/Development#Developer-6inch|AZ 351B developer]]


Line 94: Line 94:
|[[media:AZ_MiR_701.pdf‎|AZ_MiR_701.pdf‎]]
|[[media:AZ_MiR_701.pdf‎|AZ_MiR_701.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin Track 1 + 2|Spin Track 1 + 2]]  
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin Track 1 + 2|Spin Track 1 + 2]]  
|Preliminary results:
|[[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS Aligner]],


105 mJ/cm<sup>2</sup> per µm resist for i-line.
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6 - 2]] or


1/5 dose for broadband exposure.
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]]
|[[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|AZ 726 MIF developer]]
|[[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|AZ 726 MIF developer]]
|DI water
|DI water
Line 112: Line 112:
|[[media:AZ_nLOF_2020.pdf‎|AZ_nLOF_2020.pdf‎]]
|[[media:AZ_nLOF_2020.pdf‎|AZ_nLOF_2020.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin Track 1 + 2|Spin Track 1 + 2]]
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin Track 1 + 2|Spin Track 1 + 2]]
|<30 mJ/cm<sup>2</sup> per µm resist for i-line, decreasing with increasing thickness.
|[[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS Aligner]],


Same dose for broadband exposure.
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6 - 2]] or
 
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]]
|[[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|AZ 726 MIF developer]]
|[[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|AZ 726 MIF developer]]
|DI water
|DI water
Line 128: Line 130:
|[[media:SU-8_DataSheet_2005.pdf‎|SU-8_DataSheet_2005.pdf‎]], [[media:SU-8_DataSheet_2075.pdf‎|SU-8_DataSheet_2075.pdf‎]]
|[[media:SU-8_DataSheet_2005.pdf‎|SU-8_DataSheet_2005.pdf‎]], [[media:SU-8_DataSheet_2075.pdf‎|SU-8_DataSheet_2075.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]]
|[[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]]
|Thickness and process dependent.
|[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]],
 
[[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS Aligner]] or


Refer to process datasheet and literature.
[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6 - 2]]
|[[Specific_Process_Knowledge/Lithography/Development#SU8-Developer|mr-Dev 600 developer (PGMEA)]]
|[[Specific_Process_Knowledge/Lithography/Development#SU8-Developer|mr-Dev 600 developer (PGMEA)]]
|IPA
|IPA
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