Specific Process Knowledge: Difference between revisions

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|rowspan="2" valign="top"|[[Specific Process Knowledge/Lithography/Coaters|Lithography/Coaters]]
|rowspan="2" valign="top"| [[Specific Process Knowledge/Lithography/Coaters|Lithography/Coaters]]
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!Materials
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|[[Specific Process Knowledge/Thin film deposition/PECVD| Thin film deposition/PECVD]]
|rowspan="5" valign="top"|[[Specific Process Knowledge/Doping|Doping]]
|PECVD
|Ion implant
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|[[Specific Process Knowledge/Thin film deposition/PECVD| PECVD]]
|Deposition of SiO2 or Si3N4 doped with P,B and Ge
|Deposition of SiO2 or Si3N4 doped with P,B and Ge
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|[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|Thin film deposition/Furnace LPCVD PolySilicon]]
|[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|LPCVD ]]
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|Deposition of PolySi doped with B or P
|Deposition of PolySi doped with B or P
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|[[Specific Process Knowledge/Thermal Process/Dope with Boron|Thermal Process/Dope with Boron]]
|[[Specific Process Knowledge/Thermal Process/Dope with Boron|Predeposition and drive-in]]
|Predeposition and drive-in
|Doping Silicon wafers with boron
|Doping Silicon wafers with boron
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|[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Thermal Process/Dope with Phosphorus]]
|[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Predeposition and drive-in]]
|Predeposition and drive-in
|Doping Silicon wafers with phosphorus
|Doping Silicon wafers with phosphorus


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Revision as of 13:44, 10 November 2014

2nd Level - Process Topic

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Choose the process topic you are interested in

The section below here is under construction

Overview of sample processing

Clean your sample Dry your sample Create a thin film on your sample Dope your sample
Thermal treatment of your sample Make a mask on your sample Transfer pattern to your sample Define your structure directly
Bond your samples together Characterize your sample Pack your sample  



jmli test