Specific Process Knowledge/Lithography/Baking: Difference between revisions
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==Oven: 120C - 250C== | ==Oven: 120C - 250C== | ||
[[Image:Oven120C-250C in C-1.jpg|300x300px|thumb|Oven: 120C - 250C is | [[Image:Oven120C-250C in C-1.jpg|300x300px|thumb|Oven: 120C - 250C is Situated in C-1]] | ||
Variable temperature convection oven mostly used for baking of wafers as a hard baking step after development of photoresist. The set-point can be varied, but should always be returned to 120°C after use. | Variable temperature convection oven mostly used for baking of wafers as a hard baking step after development of photoresist. The set-point can be varied, but should always be returned to 120°C after use. | ||
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==Oven 250C for pretreatment== | ==Oven 250C for pretreatment== | ||
[[Image:Oven_250_degrees_for_pretreatment_cr3.jpg|300x300px|thumb|Oven 250C for pretreatment | [[Image:Oven_250_degrees_for_pretreatment_cr3.jpg|300x300px|thumb|Oven 250C for pretreatment is situated in C-1]] | ||
See [[Specific_Process_Knowledge/Lithography/Pretreatment#Oven_250C|Oven 250C]] | See [[Specific_Process_Knowledge/Lithography/Pretreatment#Oven_250C|Oven 250C]] | ||
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