Jump to content

Specific Process Knowledge/Lithography/Baking: Difference between revisions

← Older editNewer edit →
VisualWikitext
Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,527 edits
Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,527 edits
Line 143: Line 143:


==Hotplate: 90-110C==   
==Hotplate: 90-110C==   
[[Image:Hotplates.jpg|300x300px|thumb|Location of Hotplate: 90-110C in C-1]]
[[Image:Hotplate90-110C in C-1.jpg|300x300px|thumb|Location of Hotplate: 90-110C in C-1]]
Hotplate: 90-110C is used for baking of 2" - 6" wafers.
Hotplate: 90-110C is used for baking of 2" - 6" wafers.


Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Baking"