Specific Process Knowledge/Etch/Wet Aluminium Etch: Difference between revisions
No edit summary |
|||
| Line 12: | Line 12: | ||
===Comparing the two solutions=== | ===Comparing the two solutions=== | ||
{| border=" | {| border="2" cellspacing="0" cellpadding="4" align="left" | ||
! | ! | ||
! Aluminium Etch 1 | ! Aluminium Etch 1 | ||
! Aluminium Etch 2 | ! Aluminium Etch 2 | ||
|- | |- | ||
|General description | |'''General description''' | ||
| | | | ||
Etch of pure aluminium | Etch of pure aluminium | ||
| Line 23: | Line 23: | ||
Etch of aluminium + 1.5% Si | Etch of aluminium + 1.5% Si | ||
|- | |- | ||
|Chemical solution | |'''Chemical solution''' | ||
|H<math>_2</math>O:H<math>_3</math>PO<math>_4</math> 1:2 | |H<math>_2</math>O:H<math>_3</math>PO<math>_4</math> 1:2 | ||
|PES 77-19-04 | |PES 77-19-04 | ||
|- | |- | ||
|Process temperature | |'''Process temperature''' | ||
|50 <sup>o</sup>C | |50 <sup>o</sup>C | ||
| Line 34: | Line 34: | ||
|- | |- | ||
|Possible masking materials | |'''Possible masking materials''' | ||
| | | | ||
Photoresist (1.5 µm AZ5214E) | Photoresist (1.5 µm AZ5214E) | ||
| Line 40: | Line 40: | ||
Photoresist (1.5 µm AZ5214E) | Photoresist (1.5 µm AZ5214E) | ||
|- | |- | ||
|Etch rate | |'''Etch rate''' | ||
| | | | ||
~100 nm/min (Pure Al) | ~100 nm/min (Pure Al) | ||
| Line 46: | Line 46: | ||
~60(??) nm/min | ~60(??) nm/min | ||
|- | |- | ||
|Batch size | |'''Batch size''' | ||
| | | | ||
1-25 wafers at a time | 1-25 wafers at a time | ||
| Line 52: | Line 52: | ||
1-25 wafer at a time | 1-25 wafer at a time | ||
|- | |- | ||
|Size of substrate | |'''Size of substrate''' | ||
| | | | ||
4" wafers | 4" wafers | ||
| Line 58: | Line 58: | ||
4" wafers | 4" wafers | ||
|- | |- | ||
|Allowed materials | |'''Allowed materials''' | ||
| | | | ||
*Aluminium | *Aluminium | ||