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Specific Process Knowledge/Lithography/Baking: Difference between revisions

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==Fumehood hotplates==   
==Fumehood hotplates==   
[[Image:Hotplates.jpg|300x300px|thumb|Right: Hotplate 90 °C situated in C-1]]
Variable temperature hotplate mostly used for baking of single wafers as a soft baking step after a spin coating of photoresist.
Variable temperature hotplate mostly used for baking of single wafers as a soft baking step after a spin coating of photoresist.
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<gallery caption="Different places to do wet silicon oxide etch" widths="220px" heights="225px" perrow="5">
image:BHF clean RR3.jpg|BHF clean in Cleanroom C-1. Wet silicon oxide etch bath positioned to the left in the bench.
image:KOH_4tommer.jpg|BHF in cleanroom C-1 (KOH bench 1+2.) The BHF bath is positioned between the two KOH baths. This is primarily used to remove oxide before and after a KOH etch.
image:KOH3 RR4 1.JPG|BHF in cleanroom D-3 (KOH bench 6".) The BHF bath is positioned to the right. This is primarily used to remove oxide before and after a KOH etch.
image:BHF-PolySi-Al Etch.jpg|SIO etch bath (BHF with wetting agent) are positioned to the left in the bench in cleanroom D-3.
image:Stinkskab RR2.jpg|PP-bath: positioned in the upper right corner of the fumehood in cleanroom B-1. </gallery>
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