Specific Process Knowledge/Lithography/Baking: Difference between revisions

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Soft bake
Soft bake

Revision as of 11:52, 4 November 2014

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Comparing baking methods

Hotplate: 90-110C SU8 hotplates Fumehood hotplates Oven 90C Oven: 120C - 250C Oven 250C
Purpose

Soft bake

Post-exposure bake (PEB)

Soft bake

Post-exposure bake (PEB)

Soft bake

Soft bake

Hard bake

Dehydration

Temperature

Maximum 120°C

Maximum 250°C

Maximum 250°C

Fixed 90°C

120 - 250°C

Fixed 250°C

Substrate size
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • pieces
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 200 mm wafers
  • pieces
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

Silicon, glass, and polymer substrates

Film or pattern of all types

Silicon, glass, and polymer substrates

Film or pattern of all types except type IV

All substrates

Film or pattern of all types

Silicon, glass, and polymer substrates

Film or pattern of all types

Silicon, glass, and polymer substrates

Film or pattern of all types

Silicon, glass, and high Tg polymer substrates

Film or pattern of all types except resist

Restrictions III-V, copper, steel substrates

Pb, Te films

Information is given at the individual hotplate III-V substrates

Pb, Te films

III-V, copper, steel substrates Resist is not allowed


Hotplates

Hotplate: 90-110C

Location of Hotplate: 90-110C in C-1

Hotplate: 90-110C is used for baking of 2" - 6" wafers.

The user manual, and contact information can be found in LabManager: Hotplate: 90-110C


SU8 hotplates

Hotplate 1 (SU8) and Hotplate 2 (SU8) situated in C-1

We have two dedicated SU-8 hotplates in C-1.

Users can control the ramp-time, the baking temperature, and the baking time.

The user manual, and contact information can be found in LabManager: Hotplate 1 (SU8) Hotplate 2 (SU8)

Fumehood hotplates

Right: Hotplate 90 °C situated in C-1

Variable temperature hotplate mostly used for baking of single wafers as a soft baking step after a spin coating of photoresist.

Ovens

Oven 90C

Oven 90 °C: positioned in C-1

The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min.

The user manual, and contact information can be found in LabManager: Oven 90C

Oven: 120C - 250C

The user manual, and contact information can be found in LabManager: Oven: 120C - 250C

Oven 250C for pretreatment

Oven 250C for pretreatment: positioned in C-1

See Oven 250C