Specific Process Knowledge/Etch/Wet Silicon Nitride Etch: Difference between revisions
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! Nitride Etch @ 160 <sup>o</sup>C | ! Nitride Etch @ 160 <sup>o</sup>C | ||
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|General description | |'''General description''' | ||
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Etch/strip of silicon nitride | Etch/strip of silicon nitride | ||
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Etch/strip of silicon nitride | Etch/strip of silicon nitride | ||
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|Chemical solution | |'''Chemical solution''' | ||
|H<sub>3</sub>PO<sub>4</sub> (85 wt%) | |H<sub>3</sub>PO<sub>4</sub> (85 wt%) | ||
|H<sub>3</sub>PO<sub>4</sub> (85 wt%) | |H<sub>3</sub>PO<sub>4</sub> (85 wt%) | ||
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|Process temperature | |'''Process temperature''' | ||
|180 <sup>o</sup>C | |180 <sup>o</sup>C | ||
|160 <sup>o</sup>C | |160 <sup>o</sup>C | ||
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|'''Possible masking materials''' | |||
|Possible masking materials | |||
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*Thermal oxide (converted si-rich surface) | *Thermal oxide (converted si-rich surface) | ||
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*PECVD-oxide | *PECVD-oxide | ||
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|Etch rate | |'''Etch rate''' | ||
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*~85 Å/min (stoichiometric Si<sub>3</sub>N<sub>4</sub>) | *~85 Å/min (stoichiometric Si<sub>3</sub>N<sub>4</sub>) | ||
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*~? Å/min (Thermal oxide) | *~? Å/min (Thermal oxide) | ||
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|Batch size | |'''Batch size''' | ||
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1-25 wafers at a time | 1-25 wafers at a time | ||
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1-25 wafer at a time | 1-25 wafer at a time | ||
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|Size of substrate | |'''Size of substrate''' | ||
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2-6" wafers | 2-6" wafers | ||
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2-6" wafers | 2-6" wafers | ||
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|Allowed materials | |'''Allowed materials''' | ||
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*Silicon | *Silicon | ||