Specific Process Knowledge/Lithography/Baking: Difference between revisions

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 = Ovens =
-==90 C oven==
+==Oven 90C==
 [[Image:Oven_90_degrees_cr3.jpg|300x300px|thumb|Oven 90 °C: positioned in C-1]]
 The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min.
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-==120 C oven==
-[[Image:Oven_120_degrees_cr3.jpg|300x300px|thumb|Oven 120 °C: positioned in C-1]]
-°C oven is used to hard bake of resist on several wafers at time. It is recommended to hard bake for 30 min.
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-==250 C oven for pretreatment==
+==Oven 250C for pretreatment==
 [[Image:Oven_250_degrees_for_pretreatment_cr3.jpg|300x300px|thumb|Oven 250C for pretreatment: positioned in C-1]]
-[[Specific Process Knowledge/Lithography/UVLithography|UV Lithography]]
+[[Specific_Process_Knowledge/Lithography/Pretreatment#Oven_250C|Oven 250C]]
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-==250 C oven for burning resist==
-[[Image:Oven_250_degrees_for_burning_resist_cr3.jpg|300x300px|thumb|Oven 250 °C for burning resist: positioned in C-1]]
-This oven is used for "burning" the resist, therefore not considered clean.
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